gallium nitride powder is a highly effective and environmentally friendly semiconductor material. Its wide band gap allows it to sustain higher voltages than silicon and thus can be applied to high power optoelectronic devices such as violet laser diodes.
The chemical composition of gallium nitride is a ternary compound with Ga3+ and NH3. Its atomic bonds are strong. It has a high thermal capacity and is crack resistant.
It is transparent for the visible spectrum and can be fabricated into nano-sized powders. It has a bandgap of 3.4 eV which is much wider than the 1.12 eV of traditional silicon MOSFETs.
GaN is a high-temperature semiconductor material that is used in applications such as blue LEDs, violet laser diodes and photovoltaic cells. In fact, the majority of modern electronic products rely on GaN technology.
When compared with traditional silicon, it is significantly more energy efficient at all levels. In addition, the smaller size of GaN-based systems results in significant savings in system cost and packaging.
Gallium nitride is used to manufacture power semiconductors for use in the electric vehicle industry, as well as in solar power installations and motor drive power conversion schemes. Its efficiency has been proven in these areas, and it is expected that GaN will gradually replace silicon-based materials.
Gallium nitride can be prepared by a direct-current arc plasma method through the reaction of metal gallium with a mixture gas consisting of a ratio of nitrogen and ammonia. This process produces ultrafine GaN powder containing nanometer-sized polycrystals and monocrystals, which are characterized by their hexagonal morphology and size (about 20-200 nm).